• DocumentCode
    1535868
  • Title

    Design for Manufacturing of Low-Voltage Three-Dimensional Capacitors

  • Author

    Nongaillard, Matthieu ; Lallemand, Florent ; Allard, Bruno

  • Author_Institution
    Ampere Lab., Inst. Nat. des Sci. Appl. de Lyon, Villeurbanne, France
  • Volume
    10
  • Issue
    3
  • fYear
    2010
  • Firstpage
    396
  • Lastpage
    402
  • Abstract
    Given an existing manufacturing technology, the influence of the design parameters has been evaluated in order to improve the robustness of the 3-D capacitors. The objective is to select the capacitor patterns that provide a satisfying density with the required robustness with respect to the reliability indicators. The geometrical and manufacturing-related issues are both considered. The main manufacturing issues are the etching, deposition, and warpage of the wafer. The improvements have been observed experimentally for the robustness of the 3-D structures and the density of the capacitor which are increased for several proposed 3-D patterns. All capacitors tested in this paper are realized with PICS technology.
  • Keywords
    CAD/CAM; capacitors; design for manufacture; etching; integrated circuit manufacture; 3D capacitor pattern; capacitor density; deposition; etching; low voltage three-dimensional capacitor; manufacturing technology; reliability indicator; wafer; warpage; CMOS technology; Capacitors; Circuits; Dielectric substrates; Electrodes; Etching; Low voltage; Manufacturing processes; Permittivity; Robustness; Capacitors; design for manufacturing; three dimensional integrated circuits;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2010.2058114
  • Filename
    5510120