High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash Memory

Author

Wang, Kuan-Ti ; Chao, Tien-Sheng ; Wu, Woei-Cherng ; Yang, Wen-Luh ; Lee, Chien-Hsing ; Hsieh, Tsung-Min ; Liou, Jhyy-Cheng ; Wang, Shen-De ; Chen, Tzu-Ping ; Chen, Chien-Hung ; Lin, Chih-Hung ; Chen, Hwi-Huang

Author_Institution

Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

57

Issue

9

fYear

2010

Firstpage

2335

Lastpage

2338

Abstract

For the first time, a high-performance (τ_PGM = 200 ns/τ_ERS = 5 ms) cell with superior reliability characteristics is demonstrated in a nor-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight V_TH distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention.

Keywords

NOR circuits; circuit reliability; flash memories; 2-bit-cell; NOR-type flash memory; dynamic-threshold source-side injection; high-reliability dynamic-threshold source-side injection; multilevel states in a cell; silicon-oxide-nitride-oxide-silicon memory device; wrapped select-gate SONOS; Chaos; Councils; Data mining; Energy consumption; Flash memory; Helium; Nonvolatile memory; Programming profession; SONOS devices; Silicon; nor; Flash memory; multilevel states in a cell (MLC); silicon–oxide–nitride–oxide–silicon (SONOS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2054530

Filename

5510121