• DocumentCode
    1535937
  • Title

    GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTe

  • Author

    Levine, B.F. ; Bethea, C.G. ; Hasnain, G. ; Walker, Julian ; Malik, R.J.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ
  • Volume
    24
  • Issue
    12
  • fYear
    1988
  • fDate
    6/9/1988 12:00:00 AM
  • Firstpage
    747
  • Lastpage
    749
  • Abstract
    The authors achieved the first high responsitivity Rv=30000 V/W, high detectivity D*=1×1010 cm √(Hz)/W GaAs/AlGaAs multiquantum-well superlattice detector which is sensitive in the long wavelength infra-red (LWIR) spectral region. This detector operates at λ=8.3 μm and at a temperature of T=77 K
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor junctions; 77 K; 8.3 micron; IR detectors; MQW; detectivity; long-wavelength infra-red; multiquantum-well superlattice detector; responsitivity; semiconductors; temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5796