Title :
GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTe
Author :
Levine, B.F. ; Bethea, C.G. ; Hasnain, G. ; Walker, Julian ; Malik, R.J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fDate :
6/9/1988 12:00:00 AM
Abstract :
The authors achieved the first high responsitivity Rv=30000 V/W, high detectivity D*=1×1010 cm √(Hz)/W GaAs/AlGaAs multiquantum-well superlattice detector which is sensitive in the long wavelength infra-red (LWIR) spectral region. This detector operates at λ=8.3 μm and at a temperature of T=77 K
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor junctions; 77 K; 8.3 micron; IR detectors; MQW; detectivity; long-wavelength infra-red; multiquantum-well superlattice detector; responsitivity; semiconductors; temperature;
Journal_Title :
Electronics Letters
