Title :
Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)—Does the Dielectric Quality Matter?
Author :
Trojman, Lionel ; Pantisano, Luigi ; Dehan, Morin ; Ferain, Isabelle ; Severi, Simone ; Maes, Herman E. ; Groeseneken, Guido
Abstract :
One of the fundamental questions for gate-stack scaling is whether the low-field mobility measured in long-channel devices is a good proxy for short-channel performance at high field. In this paper, we thoroughly investigate low- and high-field transports (velocity and mobility) in 1-nm-EOT high-kappa materials on Si (100) and (110) down to cryogenic temperature. It is shown that scattering in Si substrate dominates the transport at high field, thus enabling relaxation of the low-field-mobility requirement for future scaling below 1-nm EOT.
Keywords :
electron mobility; hafnium compounds; high-k dielectric thin films; silicon compounds; HfSiON; Si; cryogenic temperature; dielectric quality; gate-stack scaling; high-field transport; high-k materials; low-field mobility; silicon substrate; velocity; Atomic measurements; Cryogenics; Dielectric materials; Dielectric measurements; Dielectric substrates; MOSFET circuits; Maintenance; Scattering; Semiconductor materials; Temperature measurement; (110) substrate orientation; 1-nm EOT; Cryogenic temperature; high- $kappa$/MG MOSFET; high-field transport; saturation velocity; short-channel devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2032280
