Title :
Polarisation insensitive 1.55 mu m semiconductor integrated optical amplifier with access waveguides grown by LP-MOCVD
Author :
Glastre, G. ; Rondi, D. ; Enard, A. ; Blondeau, R.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fDate :
5/23/1991 12:00:00 AM
Abstract :
A 1.55 mu m GaInAsP/InP optical amplifier integrated with access waveguides provides 0 dB fibre to fibre gain at only 47 mA bias current and a 5 dB saturation gain already high enough to design 0 dB integrated complex circuits. Polarisation gain dependence and gain ripple are less than 0.5 dB and 0.7 dB, respectively.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 micron; 47 mA; 5 dB; GaInAsP-InP optical amplifier; LP-MOCVD; access waveguides; bias current; fibre communication; fibre to fibre gain; gain ripple; polarisation insensitivity; saturation gain; semiconductor integrated optical amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910563
