DocumentCode :
1535999
Title :
Long-term 60 mW operation of 780 nm AlGaAs lasers with extended beam by additional low-Al-content layer in p-type cladding layer
Author :
Nakatsuka, S. ; Yamashita, S. ; Uchida, K. ; Kajimura, T.
Author_Institution :
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
Volume :
27
Issue :
11
fYear :
1991
fDate :
5/23/1991 12:00:00 AM
Firstpage :
900
Lastpage :
902
Abstract :
The catastrophic optical damage level of a 780 nm AlGaAs laser diode is increased by extending the optical beam profile by using a low-Al-content layer in the cladding layer. A higher light output power can be obtained without increasing threshold current, and reliable operation for more than 1000 h at 60 mW output and 50 degrees C ambient is obtained.
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; life testing; semiconductor device testing; semiconductor junction lasers; 1000 h; 50 degC; 60 mW; 780 nm; AlGaAs lasers; catastrophic optical damage level; laser diode; light output power; long term operation; low-Al-content layer; optical beam profile; p-type cladding layer; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910564
Filename :
78081
Link To Document :
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