DocumentCode :
1536094
Title :
UV assisted growth of 100 AA thick SiO2 at 550 degrees C
Author :
Kazor, A. ; Boyd, I.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Volume :
27
Issue :
11
fYear :
1991
fDate :
5/23/1991 12:00:00 AM
Firstpage :
909
Lastpage :
911
Abstract :
Thin SiO2 films have been grown by UV irradiation at much higher growth rates (more than 50 times) than those achieved during conventional thermal oxidation.
Keywords :
insulating thin films; oxidation; radiation effects; semiconductor technology; silicon compounds; 100 AA; 550 degC; MOS technology; Si; Si-SiO 2; SiO 2 thin films; UV assisted growth; UV irradiation; growth rates; oxidation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910570
Filename :
78087
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1536094
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