• DocumentCode
    1536094
  • Title

    UV assisted growth of 100 AA thick SiO2 at 550 degrees C

  • Author

    Kazor, A. ; Boyd, I.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • Volume
    27
  • Issue
    11
  • fYear
    1991
  • fDate
    5/23/1991 12:00:00 AM
  • Firstpage
    909
  • Lastpage
    911
  • Abstract
    Thin SiO2 films have been grown by UV irradiation at much higher growth rates (more than 50 times) than those achieved during conventional thermal oxidation.
  • Keywords
    insulating thin films; oxidation; radiation effects; semiconductor technology; silicon compounds; 100 AA; 550 degC; MOS technology; Si; Si-SiO 2; SiO 2 thin films; UV assisted growth; UV irradiation; growth rates; oxidation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910570
  • Filename
    78087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1536094