Title :
High-frequency performance of AlGaN channel HEMTs with high breakdown voltage
Author :
Nanjo, T. ; Kurahashi, K. ; Imai, A. ; Suzuki, Yuya ; Nakmura, M. ; Suita, M. ; Yagyu, E.
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan
Abstract :
The high-frequency characteristics of high electron mobility transistors applying AlGaN for a channel layer (AlGaN channel HEMTs) with greater impacts of alloy disorder scattering than those in conventional HEMTs with a GaN channel layer (GaN channel HEMTs) are investigated. The obtained electron saturation velocity was 4.7 × 106 cm/s and the cutoff frequency was 7 GHz in the AlGaN channel HEMTs with a gate length of 1 μm. These results are promising for several gigahertz band operations of AlGaN channel HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; wide band gap semiconductors; AlGaN; AlGaN channel HEMT; GaN; GaN channel layer; alloy disorder scattering; breakdown voltage; electron saturation velocity; frequency 7 GHz; high electron mobility transistors; size 1 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.1874
