Title :
Ga0.47In0.53As depletion mode MISFETs with negligible drain current drift
Author :
Renaud, Martin ; Boher, P. ; Schneider, Jurgen ; Barrier, J. ; Heyen, M. ; Schmitz, Darrel
Author_Institution :
Lab. d´Electron. et de Phys. Appliquee, Limeil Brevannes
fDate :
6/9/1988 12:00:00 AM
Abstract :
Ga0.47In0.53As depletion-mode metal insulator semiconductor field-effect transistors with a transconductance in the range 100-140 mS/mm and with no significant current drift (less than 3% in 30 hours) have been fabricated on epitaxial layers grown by MOCVD. This high performance has been achieved using an efficient passivation of the GaInAs surface which associates in situ native oxide removal by a hydrogen multipolar plasma and a Si3N4 film deposition
Keywords :
dielectric thin films; gallium arsenide; indium compounds; insulated gate field effect transistors; metal-insulator-semiconductor structures; passivation; semiconductor technology; silicon compounds; vapour phase epitaxial growth; Ga0.47In0.53As; GaInAs surface; MOCVD; MOVPE; Si3N4 film deposition; depletion mode MISFETs; epitaxial layers; fabrication; metal insulator semiconductor field-effect transistors; negligible drain current drift; passivation; semiconductors; transconductance;
Journal_Title :
Electronics Letters
