DocumentCode
1536145
Title
Fabrication of InP/InGaAs photodiodes for high bit rate communication by reactive ion etching
Author
Seto, M. ; Deri, R.J. ; Schiavone, L.M. ; Bhat, R. ; Soole, J. E D ; Schumacher, H. ; Andreadakis, N.C. ; Koza, M.
Author_Institution
Bell Commun. Res., Red Bank, NJ, USA
Volume
27
Issue
11
fYear
1991
fDate
5/23/1991 12:00:00 AM
Firstpage
911
Lastpage
913
Abstract
It is shown that reactive ion etching can be used for mesa etching and selfaligned contact cap removal in InP/InGaAs photodiode fabrication, without inducing unacceptable diode leakage currents. Mesa diodes with approximately 100 nA leakage, 90% quantum efficiency, and 12 GHz bandwidth at 5 V bias and 1.3 mu m wavelength, and pairs and quadruplets of such detectors for coherent lightwave systems are demonstrated.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; sputter etching; 1.3 micron; 100 nA; 12 GHz; 90 percent; InP-InGaAs photodiodes; coherent lightwave systems; detectors; high bit rate communication; leakage currents; mesa diodes; mesa etching; reactive ion etching; selfaligned contact cap removal;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910571
Filename
78088
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