DocumentCode :
1536293
Title :
Low-Standby-Power Bulk MOSFET Design Using High- 
Trench Isolation
Author :
Vega, Reinaldo A. ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Volume :
30
Issue :
12
fYear :
2009
Firstpage :
1380
Lastpage :
1382
Abstract :
High-permittivity trench isolation (HTI) is proposed as a means to achieve low off-state leakage current without a high-aspect-ratio or ultrathin body structure. The HTI provides for improved capacitive coupling between the gate and the active region sidewalls, which allows the steep-retrograde body-doping profile to be recessed while suppressing short-channel effects. The result is a lower body-doping concentration at the drain junction, resulting in ~ 10times lower band-to-band tunneling leakage than for a conventional bulk MOSFET design.
Keywords :
MOSFET; doping profiles; high-k dielectric thin films; isolation technology; semiconductor device models; capacitive coupling; drain junction; high-permittivity trench isolation; standby-power bulk MOSFET design; steep-retrograde body-doping profile; Hf-based dielectrics; high permittivity (high- $k$ ); multigate FET; scalability; tunneling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2034279
Filename :
5308447
Link To Document :
