Title :
High temperature and high frequency performance of gain-guided surface emitting lasers
Author :
Hasnain, G. ; Tai, K. ; Dutta, N.K. ; Wang, Y.H. ; Wynn, J.D. ; Weir, B.E. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
5/23/1991 12:00:00 AM
Abstract :
For the first time, 860 nm gain-guided top surface emitting lasers (SEL) that operate continuous wave up to 90 degrees C and can be amplitude modulated at frequencies beyond 5 GHz are demonstrated. Laser thresholds as low as 2 mA and output powers more than 1 mW were obtained at room temperature. Singlemode emission with sidemode suppression greater than 50 dB was also observed. The higher operating temperature was achieved by grading the doping in semiconductor distributed Bragg reflectors such that resistive heating was lowered without increasing free carrier absorption.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; optical modulation; semiconductor junction lasers; 0.5 to 5.4 GHz; 1 mW; 2 mA; 860 nm; 90 degC; AlGaAs-GaAs; amplitude modulation; distributed Bragg reflectors; gain-guided surface emitting lasers; graded doping; high frequency performance; laser threshold currents; operating temperature; output powers; sidemode suppression; single mode emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910573