Title :
Characteristics of floating gate device as analogue memory for neural networks
Author :
Fujita, O. ; Amemiya, Y. ; Iwata, A.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
5/23/1991 12:00:00 AM
Abstract :
An effective controlling circuit for a floating-gate MOSFET analogue memory used in neural networks is described. It is possible to charge or discharge the floating gate storage with high resolution of more than 1% of full scale. The experimental results are described and discussed. An improved device structure is proposed for simplifying the controlling circuit.
Keywords :
analogue circuits; analogue storage; field effect transistor circuits; neural nets; analogue memory; controlling circuit; floating gate device; floating-gate MOSFET analogue memory; neural networks; storage charge; storage discharge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910578
