High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

Author

Chung, Y. ; Cai, S. ; Lee, W. ; Lin, Y. ; Wen, C.P. ; Wang, K.L. ; Itoh, T.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

37

Issue

19

fYear

2001

fDate

9/13/2001 12:00:00 AM

Firstpage

1199

Lastpage

1200

Abstract

A high power wideband feedback amplifier module using AlGaN/ GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12V (V_ds) and a gate voltage of -3 V (V_gs)

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; feedback amplifiers; field effect analogue integrated circuits; gallium compounds; inductance; microwave power amplifiers; modules; wide band gap semiconductors; wideband amplifiers; -3 V; 0 to 5 GHz; 12 V; 20 percent; 9 dB; AlGaN-GaN; drain inductance; drain voltage; feedback loop inductance; gate voltage; high power wideband AlGaN/GaN HEMT feedback amplifier module; power added efficiency; saturation power level; shunt feedback topology; small signal gain;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010787

Filename

953346