Title :
Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure
Author :
Ishikawa, Y. ; Ishihara, T. ; Iwasaki, M. ; Tabe, M.
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fDate :
9/13/2001 12:00:00 AM
Abstract :
The resonant tunnelling effect was studied for Si/SiO2 double barrier structures fabricated from a bonded silicon-on-insulator wafer with an ultrathin buried SiO2 layer. As a result, in Si/SiO2 systems, we observed, for the first time, negative differential conductance due to resonant tunnelling of electrons
Keywords :
buried layers; elemental semiconductors; negative resistance; resonant tunnelling; silicon; silicon compounds; silicon-on-insulator; 15 K; Si-SiO2; Si/SiO2 double barrier structures; SiO2/single-crystalline-Si double barrier structure; bonded silicon-on-insulator wafer; negative differential conductance; resonant electron tunnelling; resonant tunnelling; ultrathin BOX layer; ultrathin buried SiO2 layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010817
