Title :
12 W broad area semiconductor amplifier with diffraction limited optical output
Author :
Goldberg, L. ; Weller, J.F. ; Mehuys, D. ; Wetch, D.F. ; Scifres, D.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
5/23/1991 12:00:00 AM
Abstract :
Broad area travelling wave GaAlAs SQW optical amplifiers have been fabricated and characterised. Using a 600 mu m wide and 1000 mu m long double pass amplifier, 12 W of peak pulsed output power was achieved with a 0.08 degrees wide diffraction limited far-field lobe. Small signal gain of 31 dB was measured in 400 mu m wide active area device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 12 W; 31 dB; 400 to 1000 micron; GaAlAs; III-V semiconductors; SQW optical amplifiers; active area; diffraction limited far-field lobe; diffraction limited optical output; double pass amplifier; peak pulsed output power; small signal gain; travelling wave amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910580
