Title :
Delay models and speed improvement techniques for RC tree interconnections among small-geometry CMOS inverters
Author :
Wu, Chung-Yu ; Shiau, Ming-Chuen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
10/1/1990 12:00:00 AM
Abstract :
Physical delay models entirely based upon device equations for small-geometry CMOS inverters with RC tree interconnection networks are presented. Through extensive comparisons with SPICE simulation results, it is shown that the maximum relative error in delay-time calculations using the developed model is within 15% for 1.5-μm CMOS inverters with RC tree interconnection networks. An experimental sizing program is constructed for speed improvement of interconnection lines and trees. In this program, given the size of the input logic gate and its driving interconnection resistances, capacitances, and structures, users can choose one of four speed-improvement techniques and determine the suitable sizes and/or number of drivers/repeaters for a minimum delay. The four speed-improvement techniques use minimum-size repeaters and cascaded input drivers to reduce the interconnection delay. It is found that the required tapering factor in cascaded drivers is not the base of the natural logarithm, but a value in the range 4-8. Adding a small number of drivers/repeaters with large sizes reduces the interconnection delay more efficiently
Keywords :
CMOS integrated circuits; circuit analysis computing; delays; equivalent circuits; integrated logic circuits; logic CAD; semiconductor device models; RC tree interconnections; SPICE simulation; capacitances; cascaded input drivers; delay models; delay-time calculations; driving interconnection resistances; input logic gate; interconnection delay reduction; minimum-size repeaters; sizing program; small-geometry CMOS inverters; speed improvement techniques; tapering factor; CMOS logic circuits; Capacitance; Delay; Equations; Inverters; Logic gates; Multiprocessor interconnection networks; Repeaters; SPICE; Semiconductor device modeling;
Journal_Title :
Solid-State Circuits, IEEE Journal of