A CMOS 400-Mb/s serial link for AS-memory systems using a PWM scheme

Author

Chen, Wei-Hung ; Guang-Kaai Dehang ; Chen, Jong-Woei ; Liu, Shen-Iuan

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

36

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

1498

Lastpage

1505

Abstract

In this paper, a serial link for AS-memory systems fabricated in a 0.25-μm standard CMOS technology is presented. This serial link utilizes a pulsewidth modulation (PWM) technique. By transmitting the PWM-encoded signal with periodic rising edges, the clock can be implicitly embedded in the data stream and the associating overhead needed in clock/data recovery circuits can, be mitigated. The symbol rate is 200 Mb/s and the equivalent data rate is 400 Mb/s. The PWM transceiver dissipates 66.5 mW at a 2.5-V supply voltage. It is suitable for the AS-memory systems in which the pin count is limited and elaborate clock/data recovery circuits are not required

Keywords

CMOS memory circuits; application specific integrated circuits; pulse width modulation; transceivers; 0.25 micron; 2.5 V; 400 Mbit/s; 66.5 mW; AS memory system; CMOS serial link; PWM transceiver; Application specific integrated circuits; CMOS technology; Clocks; Digital systems; Frequency; Phase locked loops; Phase modulation; Pulse modulation; Pulse width modulation; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.953478

Filename

953478