DocumentCode :
1536893
Title :
Comment on “Compact, High-Q, and Low-Current Dissipation CMOS Differential Active Inductor”
Author :
Andriesei, C. ; Goras, Liviu ; Maftei, Vlad
Author_Institution :
Faculty of Electronics, Telecommunications and Information Technology, “Gheorghe Asachi” Technical University of Iaşi, Romania
Volume :
22
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
381
Lastpage :
382
Abstract :
In a recent letter [ibid., vol. 18, no. 10, pp. 683??685, Oct. 2008], C.L. Ler et al. present a CMOS differential active inductor (DAI) based on the single transistor source degenerated architecture proposed by those authors in ibid., vol. 44, no. 3, pp. 196??197, Jan. 2008. The aim of this Comment is to reveal the general configurations and circuit equivalences which the results in the Oct 2008 paper are based on and to prove that the active inductor does not fit to the term gyrator mentioned in that paper. In this regard, two observations are proposed. The first one is that both circuits can be derived from given general topologies using capacitors for Z(s). The second observation is that the series connection shown here in Fig. 2(a) is equivalent to the series-parallel circuit in Fig. 2(b) which for Z(s) = 1/sC gives the results reported in the two papers referenced.
Keywords :
Active inductors; CMOS integrated circuits; Capacitors; Gyrators; Transistors;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2202891
Filename :
6214996
Link To Document :
بازگشت