DocumentCode :
1536908
Title :
Localized Rapid Heating by Low-Power Solid-State Microwave Drill
Author :
Meir, Yehuda ; Jerby, Eli
Author_Institution :
Fac. of Eng., Tel-Aviv Univ., Ramat Aviv, Israel
Volume :
60
Issue :
8
fYear :
2012
Firstpage :
2665
Lastpage :
2672
Abstract :
This paper presents a theoretical and experimental study of a locally induced microwave-heating effect implemented by a low-power transistor-based microwave drill. A coupled thermal-electromagnetic model shows that the thermal-runaway instability can be excited also by relatively low microwave power, in the range ~ 10-100 W, hence by solid-state sources rather than magnetrons. Local melting then occurs in a millimeter scale within seconds in various materials, such as glass, ceramics, basalts, and plastics. The experimental device employs an LDMOS transistor in an oscillator scheme, feeding a miniature microwave-drill applicator. The experimental results verify the rapid heating effect, similarly to the theoretical model. These findings may lead to various material-processing applications of local microwave heating implemented by solid-state devices, including local melting (for surface treatments, chemical reactions, joining, etc.), delicate drilling (e.g., of bones in orthopedic operations), local evaporation, ignition, and plasma ejection (e.g., in microwave-induced breakdown spectroscopy (MIBS) for material identification).
Keywords :
MOSFET; drilling; driver circuits; microwave field effect transistors; microwave heating; LDMOS transistor; delicate drilling; local microwave heating; localized rapid heating; low power solid state microwave drill; low power transistor based microwave drill; material processing applications; microwave heating effect; miniature microwave-drill applicator; oscillator scheme; solid state device; solid state source; thermal-electromagnetic model; thermal-runaway instability; Electromagnetic heating; Glass; Microwave oscillators; Microwave transistors; Hotspots; laterally diffused metal–oxide semiconductor field-effect tranLDMOS-FET; microwave drills; microwave heating; thermal-runaway instabilities;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2198233
Filename :
6214998
Link To Document :
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