Title :
Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 Thin Film Applied to Embedded Decoupling Capacitors
Author :
Seung-Hwan Lee ; Hong-Ki Kim ; Min-Gyu Kang ; Chong-Yun Kang ; Sung-Gap Lee ; Young-Hie Lee ; Jung-Rag Yoon
Author_Institution :
Dept. of Electron. Mater. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
A formed device embedded-type 0402 sized (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.
Keywords :
calcium compounds; capacitors; ceramics; current density; dielectric losses; dielectric thin films; leakage currents; printed circuits; strontium compounds; titanium compounds; zirconium compounds; (Ca0.7Sr0.3)(Zr0.8Ti0.2)O3; CSZT embedded capacitor; capacitance 406.1 pF; dielectric loss; electrical properties; embedded decoupling capacitors; embedded passive capacitor; embedded printed circuit board; embedded-type 0402; equivalent series inductance; equivalent series resistance; frequency 1 MHz; leakage current density; resistance 6.1 ohm; thin film; voltage 3 V; Capacitance; Capacitors; Dielectric losses; Electrodes; Leakage currents; Materials; CSZT; FDE; FDE.; embedded capacitor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2320295
