Title :
High dynamic range microwave FET
Author :
Ikalainen, P.K. ; Witkowski, L.C.
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
fDate :
5/23/1991 12:00:00 AM
Abstract :
A highly linear GaAs MESFET has demonstrated an output two-tone third-order intercept point of 42.2 dBm at 10 GHz with 3.15 dB noise figure and 9.1 dB gain with only 240 mW of DC bias. Minimum noise figure was 1.24 dB.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; solid-state microwave devices; 1.24 to 3.15 dB; 10 GHz; 9.1 dB; DC bias; GaAs; III-V semiconductors; MESFET; noise figure; output two-tone third-order intercept point;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910590
