Title :
Enhanced CW performance of the interband cascade laser using improved device fabrication
Author :
Bradshaw, John L. ; Pham, J.T. ; Yang, Rui Q. ; Bruno, J.D. ; Wortman, D.E.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Continuous-wave (CW) operation of a mid-infrared type-II interband cascade (IC) laser has been demonstrated at temperatures up to 142 K by improving device processing and fabrication. Also, the IC laser exhibited record-high wall-plug efficiencies (~18% at 60 K) with considerable CW output powers. An analysis of the thermal resistance partially explains the still low maximum CW operating temperature and suggests further potential for improvement with continued development of fabrication/packaging techniques
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical fabrication; quantum well lasers; thermal resistance; 142 K; 18 percent; 60 K; Al(In)Sb/InAs/Ga(In)Sb; AlInSb-InAs-GaInSb; CW output power; continuous-wave operation; device fabrication; device processing; enhanced CW performance; interband cascade laser; maximum CW operating temperature; mid-infrared type-II interband cascade laser; multiple coupled QWs; packaging techniques; thermal resistance; wall-plug efficiencies; Optical device fabrication; Optical scattering; Packaging; Power generation; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature; Thermal resistance;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.954117
