Enhanced CW performance of the interband cascade laser using improved device fabrication

Author

Bradshaw, John L. ; Pham, J.T. ; Yang, Rui Q. ; Bruno, J.D. ; Wortman, D.E.

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

Volume

7

Issue

2

fYear

2001

Firstpage

102

Lastpage

105

Abstract

Continuous-wave (CW) operation of a mid-infrared type-II interband cascade (IC) laser has been demonstrated at temperatures up to 142 K by improving device processing and fabrication. Also, the IC laser exhibited record-high wall-plug efficiencies (~18% at 60 K) with considerable CW output powers. An analysis of the thermal resistance partially explains the still low maximum CW operating temperature and suggests further potential for improvement with continued development of fabrication/packaging techniques

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical fabrication; quantum well lasers; thermal resistance; 142 K; 18 percent; 60 K; Al(In)Sb/InAs/Ga(In)Sb; AlInSb-InAs-GaInSb; CW output power; continuous-wave operation; device fabrication; device processing; enhanced CW performance; interband cascade laser; maximum CW operating temperature; mid-infrared type-II interband cascade laser; multiple coupled QWs; packaging techniques; thermal resistance; wall-plug efficiencies; Optical device fabrication; Optical scattering; Packaging; Power generation; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature; Thermal resistance;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.954117

Filename

954117