Title :
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
Author :
Eliseev, P.G. ; Li, Huaqing ; Liu, Tiegen ; Newell, T.C. ; Lester, L.F. ; Malloy, K.J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
Abstract :
Emission spectra and modal optical gain are investigated in ultralow-threshold MBE-grown InAs-InGaAs quantum dot (QD) structures. The record lowest room-temperature inversion current is found to be ~13 A cm-2. The rate-equation model is proposed describing the optical gain related to the ground-state (GS) transitions in QDs. The ground-state gain goes to the maximum value that corresponds to the total inversion of available levels. The gain cross section for the GS emission is estimated as ~7×10-15 cm2
Keywords :
III-V semiconductors; gallium arsenide; ground states; indium compounds; laser transitions; quantum well lasers; semiconductor quantum dots; spontaneous emission; DWELL lasers; InAs-InGaAs; MBE growth; emission spectra; gain cross section; ground-state emission; ground-state transitions; modal optical gain; rate-equation model; room-temperature inversion current; total level inversion; ultralow-threshold InAs-InGaAs quantum-dot lasers; Diode lasers; Indium gallium arsenide; Optical materials; Optical recording; Quantum dot lasers; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Stimulated emission; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.954121
