Title :
High-power highly reliable Al-free 940-nm diode lasers
Author :
Erbert, Goetz ; Beister, Gert ; Hülsewede, Ralf ; Knauer, Arne ; Pittroff, Wolfgang ; Sebastian, Jürgen ; Wenzel, Hans ; Weyers, Markus ; Tränkle, Günther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
Al-free diode lasers emitting at 930 nm having a broadened step-index waveguide structure and a single active InGaAs quantum well have been realized by MOVPE. The impact of waveguide thickness on device performance has been studied. The highest wall plug efficiency of about 60% has been obtained with diode lasers having a 1-μm-thick waveguide. Increasing the waveguide thickness to 1.5 μm resulted in record low degradation rates below 10-5 h-1 for 3-W output power (100 μm stripe width). The same diode lasers showed a good long-term reliability even at an output power of 4 W. The best beam quality had diode lasers with a 2-μm-thick waveguide, at the expense of a reduced temperature stability
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser reliability; quantum well lasers; semiconductor device reliability; thermal stability; vapour phase epitaxial growth; waveguide lasers; 1 mum; 1.5 mum; 100 mum; 2 mum; 3 W; 4 W; 60 percent; 940 nm; Al-free diode lasers; InGaAs-InGaAsP; MOVPE; beam quality; broadened step-index waveguide structure; degradation rate; diode lasers; long-term reliability; output power; single active InGaAs quantum well; temperature stability; wall plug efficiency; waveguide thickness; Degradation; Diode lasers; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Laser beams; Laser stability; Plugs; Power generation; Temperature;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.954122
