Title :
10 Gbit/s high sensitivity low error rate decision circuit implemented with C-doped AlGaAs/GaAs HBTs
Author :
Montgomery, R.K. ; Smith, Peter ; Ren, Fengyuan ; Fullowan, T.R. ; Abernathy, C.R. ; Kopf, R.F. ; Pearton, S.J. ; Lothian, J. ; Wisk, Patrick ; Nottenburg, R.N.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
5/23/1991 12:00:00 AM
Abstract :
A 10 Gbit/s decision circuit has been implemented using AlGAs/GaAs HBTs with a carbon doped base region. The circuit has an ambiguity level of 27 mV peak to peak with a 240 degrees phase margin at 10 Gbit/s. The error ratio was less than 10-14 for 100 mV peak to peak input data using a 223-1 PRBS.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; carbon; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; 10 Gbit/s; AlGaAs-GaAs:C; C doped base region; HBT; decision circuit; digital IC; high sensitivity; low error rate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910609
