• DocumentCode
    1537151
  • Title

    10 Gbit/s high sensitivity low error rate decision circuit implemented with C-doped AlGaAs/GaAs HBTs

  • Author

    Montgomery, R.K. ; Smith, Peter ; Ren, Fengyuan ; Fullowan, T.R. ; Abernathy, C.R. ; Kopf, R.F. ; Pearton, S.J. ; Lothian, J. ; Wisk, Patrick ; Nottenburg, R.N.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    27
  • Issue
    11
  • fYear
    1991
  • fDate
    5/23/1991 12:00:00 AM
  • Firstpage
    976
  • Lastpage
    978
  • Abstract
    A 10 Gbit/s decision circuit has been implemented using AlGAs/GaAs HBTs with a carbon doped base region. The circuit has an ambiguity level of 27 mV peak to peak with a 240 degrees phase margin at 10 Gbit/s. The error ratio was less than 10-14 for 100 mV peak to peak input data using a 223-1 PRBS.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; carbon; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; 10 Gbit/s; AlGaAs-GaAs:C; C doped base region; HBT; decision circuit; digital IC; high sensitivity; low error rate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910609
  • Filename
    78124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1537151