Title :
Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure
Author :
Kawazu, Zempei ; Tashiro, Yoshihisa ; Shima, Akihiro ; Suzuki, Daisuke ; Nishiguchi, Harumi ; Yagi, Tetsuya ; Omura, Etsuji
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
The high-power operation of the lateral mode stabilized 780-nm AlGaAs laser diode (LD) with the window-mirror structure has been achieved. The stable lateral mode operation up to 250 mW is realized. This is the highest power record among the narrow stripe LDs with the wavelength of 780 nm. This LD is suitable for the next generation high-speed (16-24×) CD-R/RW drives needing 200 mW class LDs
Keywords :
III-V semiconductors; aluminium compounds; disc drives; gallium arsenide; laser beams; laser mirrors; laser modes; laser stability; optical disc storage; optical windows; quantum well lasers; 200 mW; 250 mW; 780 nm; AlGaAs; AlGaAs laser diode; high-power operation; laser operation; lateral mode stabilized laser diode; narrow stripe laser diodes; next generation high-speed CD-R/RW drives; power record; single-lateral mode laser diodes; stable lateral mode operation; wavelength; window-mirror structure; Diode lasers; High speed optical techniques; Laser modes; Optical recording; Optical refraction; Optical variables control; Optical waveguides; Power generation; Power lasers; Waveguide lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.954128
