Title :
Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation
Author :
Niskiyama, N. ; Arai, Masakazu ; Shinada, Satoshi ; Azuchi, Munechika ; Miyamoto, Tomoyuki ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over 2% on GaAs (311)B substrate for a polarization controlled vertical-cavity surface-emitting laser (VCSEL). By increasing the In composition in GaInAs, the optical anisotropy in photoluminescence (PL) intensity was increased. The anisotropy of 50% was obtained at 1.15 μm emission wavelength. We have demonstrated edge-emitting lasers and VCSELs emitting at over 1.1 μm on GaAs (311)B substrate for the first time. The 1.15-μm edge-emitting laser showed a characteristic temperature of 210 K and the threshold current density of 410 A/cm2. The threshold current and lasing wavelength of VCSELs are 0.9 mA and 1.12 μm, respectively. The orthogonal polarization suppression ratio was 25 dB and CW operation up to 170°C without a heat sink was achieved
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; laser stability; laser transitions; light polarisation; photoluminescence; quantum well lasers; substrates; surface emitting lasers; 0.9 mA; 1.15 mum; 170 C; 210 K; GaAs; GaAs (311)B substrate; GaInAs-GaAs; GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser; characteristic temperature; edge-emitting lasers; emission wavelength; highly strained; lasing wavelength; optical anisotropy; orthogonal polarization suppression ratio; photoluminescence intensity; polarization controlled vertical-cavity surface-emitting laser; stable polarization operation; threshold current density; Anisotropic magnetoresistance; Capacitive sensors; Gallium arsenide; Optical polarization; Quantum well lasers; Quantum wells; Strain control; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.954136
