Operation of submicrometre lateral bipolar transistors down to 10 K

Experimental results on operating submicrometre lateral bipolar transistors at cryogenic temperatures are reported. These devices, fabricated in standard micrometre CMOS technology, were found to operate satisfactorily with high current gain down to 10 K, which was the lowest temperature tested. This device is of interest in circuits interfacing with log wave infrared detectors and other low-impedance devices.