• DocumentCode
    1537226
  • Title

    Operation of submicrometre lateral bipolar transistors down to 10 K

  • Author

    Jayadev, T.S. ; Woo, J.C.S. ; Verdonckt-Vandebroek, S. ; Wong, S. Simon

  • Author_Institution
    Lockheed Palo Alto Res. Lab., CA, USA
  • Volume
    27
  • Issue
    11
  • fYear
    1991
  • fDate
    5/23/1991 12:00:00 AM
  • Firstpage
    998
  • Lastpage
    1000
  • Abstract
    Experimental results on operating submicrometre lateral bipolar transistors at cryogenic temperatures are reported. These devices, fabricated in standard micrometre CMOS technology, were found to operate satisfactorily with high current gain down to 10 K, which was the lowest temperature tested. This device is of interest in circuits interfacing with log wave infrared detectors and other low-impedance devices.
  • Keywords
    bipolar transistors; cryogenics; 10 K; IR detector interface circuits; cryogenic temperatures; current gain; lateral bipolar transistors; log wave infrared detectors; low-impedance devices; submicron devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910622
  • Filename
    78137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1537226