Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers

Author

Selmic, Sandra R. ; Chou, Tso-Min ; Sih, JiehPing ; Kirk, Jay B. ; Mantle, A. ; Butler, Jerome K. ; Bour, David ; Evans, Gary A.

Author_Institution

Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA

Volume

7

Issue

2

fYear

2001

Firstpage

340

Lastpage

349

Abstract

A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-μm lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-InP laser has a threshold current of 12.5 mA at 25°C, with a slope efficiency of 0.43 W/A, at 77 K or greater characteristic temperature, a 38° perpendicular far-field beam divergence, and will operate at temperatures in excess of 100°C

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser transitions; optical design techniques; optical transmitters; quantum well lasers; 1.3 mum; 1.3-μm AlGaInAs-InP multiple-quantum-well lasers; 100 C; 12.5 mA; 25 C; 77 K; AlGaInAs-InP; characteristic temperature; communication systems; comprehensive design method; electromagnetic waveguide theory; far-field beam divergence; long wavelength strained quantum-well lasers; multiband effective mass theory; threshold current; uncooled multiple-quantum-well AlGaInAs-InP 1.3-μm lasers; Communication systems; Design methodology; Effective mass; Electromagnetic waveguides; Laser theory; Optical design; Quantum well devices; Quantum well lasers; Temperature; Waveguide lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.954148

Filename

954148