Title :
Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs
Author :
Takaoka, Keiji ; Ishikawa, Masayuki ; Hatakoshi, Gen-ichi
Author_Institution :
Adv. Discrete Semicond. Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
InGaAlP-based red vertical-cavity surface-emitting lasers (VCSELs) have been successfully fabricated using the proton-implanted planar structure suitable for mass production. A low threshold current of 2.5 mA with 666-nm lasing wavelength at room temperature and a high maximum continuous wave (CW) lasing temperature of 60°C have been achieved. In addition, it was found that the maximum CW lasing temperature decreased linearly with the increase in the device diameter. This was because the thermal resistance of the device was approximately inversely proportional to the device diameter
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; ion implantation; laser transitions; optical fabrication; quantum well lasers; surface emitting lasers; 2.5 mA; 60 C; 666 nm; InGaAlP; InGaAlP-based proton-implanted red VCSELs; InGaAlP-based red vertical-cavity surface-emitting lasers; device diameter; high maximum CW lasing temperature; high-temperature operation; inversely proportional; lasing wavelength; low threshold current; low-threshold; mass production; proton-implanted planar structure; room temperature; thermal resistance; High speed optical techniques; Light sources; Optical fibers; Optical surface waves; Stimulated emission; Surface emitting lasers; Surface resistance; Temperature; Thermal resistance; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.954154
