Title :
Breakdown quenching in high electron mobility transistor by using body contact
Author :
Sleiman, Ammar ; Di Carlo, Aldo ; Lugli, Paolo ; Zandler, Günther
Author_Institution :
Dept. of Electron. Eng., Rome Univ., Italy
fDate :
10/1/2001 12:00:00 AM
Abstract :
In this paper, the effect of a body contact (BC) to quench breakdown effects and increase the breakdown voltage in high-electron mobility transistors (HEMTs) is theoretically investigated. The body contact is formed by a highly p-type doped substrate connected to an ohmic back contact. By means of a two-dimensional (2-D) self consistent Monte Carlo simulator we show that the BC prevents holes generated by impact ionization (II) from accumulating in the channel and in the buffer, thus inhibiting the parasitic bipolar effect (PBE). This improves the breakdown behavior and extends the range of the usable drain voltages
Keywords :
Monte Carlo methods; high electron mobility transistors; impact ionisation; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 2D self consistent Monte Carlo simulator; body contact; breakdown behavior; breakdown quenching; breakdown voltage; high electron mobility transistor; highly p-type doped substrate; impact ionization; ohmic back contact; parasitic bipolar effect; usable drain voltages; Breakdown voltage; Electric breakdown; Gallium arsenide; HEMTs; Impact ionization; Indium phosphide; MODFETs; Microwave devices; Monte Carlo methods; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
