Breakdown quenching in high electron mobility transistor by using body contact

Author

Sleiman, Ammar ; Di Carlo, Aldo ; Lugli, Paolo ; Zandler, Günther

Author_Institution

Dept. of Electron. Eng., Rome Univ., Italy

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2188

Lastpage

2191

Abstract

In this paper, the effect of a body contact (BC) to quench breakdown effects and increase the breakdown voltage in high-electron mobility transistors (HEMTs) is theoretically investigated. The body contact is formed by a highly p-type doped substrate connected to an ohmic back contact. By means of a two-dimensional (2-D) self consistent Monte Carlo simulator we show that the BC prevents holes generated by impact ionization (II) from accumulating in the channel and in the buffer, thus inhibiting the parasitic bipolar effect (PBE). This improves the breakdown behavior and extends the range of the usable drain voltages

Keywords

Monte Carlo methods; high electron mobility transistors; impact ionisation; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 2D self consistent Monte Carlo simulator; body contact; breakdown behavior; breakdown quenching; breakdown voltage; high electron mobility transistor; highly p-type doped substrate; impact ionization; ohmic back contact; parasitic bipolar effect; usable drain voltages; Breakdown voltage; Electric breakdown; Gallium arsenide; HEMTs; Impact ionization; Indium phosphide; MODFETs; Microwave devices; Monte Carlo methods; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954452

Filename

954452