Title :
Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors
Author :
Nam, In-Ho ; Sim, Jae Sung ; Hong, Sung In ; Park, Byung-Gook ; Lee, Jong Duk ; Lee, Seung-Woo ; Kang, Man-Sug ; Kim, Young-Wug ; Suh, Kwang-Pyuk ; Lee, Won Seong
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
10/1/2001 12:00:00 AM
Abstract :
Nitrogen implantation on the silicon substrate was performed before the gate oxidation at a fixed energy of 30 keV and with the split dose of 1.0×1014/cm2 and 2.0×1014 /cm2. Initial O2 injection method was applied for gate oxidation. The method is composed of an O2 injection/N2 anneal/main oxidation, and the control process is composed of a N2 anneal/main oxidation. CMOS transistors with gate oxide thickness of 2 nm and channel length of 0.13 μm have been fabricated by use of the method. Compared to the control process, the initial O2 injection process increases the amount of nitrogen piled up at the Si/SiO2 interface and suppresses the growth of gate oxide effectively. Using this method, the oxidation retarding effect of nitrogen was enhanced. Driving currents, hot carrier reliability, and time-zero dielectric breakdown (TZDB) characteristics were improved
Keywords :
MOSFET; elemental semiconductors; hot carriers; insulating thin films; ion implantation; nitrogen; semiconductor device breakdown; semiconductor device reliability; silicon; silicon compounds; 0.13 micron; 2 nm; 30 keV; SiO2-Si:N; channel length; control process; deep submicron CMOS transistors; driving currents; gate oxide thickness; hot carrier reliability; ion implantation; oxidation retarding effect; split dose; time-zero dielectric breakdown; ultrathin gate oxide; Annealing; Boron; Degradation; Furnaces; MOSFETs; Nitrogen; Oxidation; Process control; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
