Title :
A methodology for deep sub-0.25 μm CMOS technology prediction
Author :
Palankovski, Vassil ; Belova, Nadya ; Grasser, Tibor ; Puchner, Helmut ; Aronowitz, Shelton ; Selberherr, Siegfried
Author_Institution :
Inst. fur Mikroelektron., Tech. Univ. Wien, Austria
fDate :
10/1/2001 12:00:00 AM
Abstract :
We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 μm technology and applied to 0.13 μm technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data
Keywords :
CMOS integrated circuits; calibration; circuit simulation; integrated circuit technology; technology CAD (electronics); 0.13 micron; 0.25 micron; deep-sub-quarter-micron CMOS technology; device calibration; process calibration; ring oscillator; technology computer aided design optimization; transient mixed-mode device/circuit simulation; two-dimensional device simulation; CMOS technology; Calibration; Circuit simulation; Computational modeling; Delay estimation; Implants; Medical simulation; Optimized production technology; Predictive models; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
