A methodology for deep sub-0.25 μm CMOS technology prediction

Author

Palankovski, Vassil ; Belova, Nadya ; Grasser, Tibor ; Puchner, Helmut ; Aronowitz, Shelton ; Selberherr, Siegfried

Author_Institution

Inst. fur Mikroelektron., Tech. Univ. Wien, Austria

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2331

Lastpage

2336

Abstract

We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 μm technology and applied to 0.13 μm technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data

Keywords

CMOS integrated circuits; calibration; circuit simulation; integrated circuit technology; technology CAD (electronics); 0.13 micron; 0.25 micron; deep-sub-quarter-micron CMOS technology; device calibration; process calibration; ring oscillator; technology computer aided design optimization; transient mixed-mode device/circuit simulation; two-dimensional device simulation; CMOS technology; Calibration; Circuit simulation; Computational modeling; Delay estimation; Implants; Medical simulation; Optimized production technology; Predictive models; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954473

Filename

954473