Title :
A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film
Author :
Wakabayashi, Hitoshi ; Saito, Yukishige ; Takeuchi, Kiyoshi ; Mogami, Tohru ; Kunio, Takemitsu
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan
fDate :
10/1/2001 12:00:00 AM
Abstract :
A novel dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film is described. It is based on a new finding that threshold voltage (Vth) depends on the concentration of nitrogen in the TiNx gate electrode. We found that a V th shift as high as -110 mV is controlled by low-energy nitrogen-ion implantation (N I/I) into the titanium nitride film. By using this technology only for nMOSFETs, dual-metal gate CMOS devices are fabricated with a CMOS-process compatibility. A low Vth is achieved for both n- and pMOSFETs by combining N I/I and a low-doped channel structure
Keywords :
MOSFET; ion implantation; semiconductor device metallisation; titanium compounds; work function; MOSFET; TiN; TiNx gate electrode; dual-metal gate CMOS technology; low-doped channel structure; nitrogen concentration control; nitrogen ion implantation; threshold voltage; titanium nitride film; work function; CMOS logic circuits; CMOS technology; Electrodes; Laboratories; MOSFETs; Nitrogen; Silicon; Sputtering; Tin; Titanium;
Journal_Title :
Electron Devices, IEEE Transactions on
