A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

Author

Wakabayashi, Hitoshi ; Saito, Yukishige ; Takeuchi, Kiyoshi ; Mogami, Tohru ; Kunio, Takemitsu

Author_Institution

Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2363

Lastpage

2369

Abstract

A novel dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film is described. It is based on a new finding that threshold voltage (V_th) depends on the concentration of nitrogen in the TiNx gate electrode. We found that a V _th shift as high as -110 mV is controlled by low-energy nitrogen-ion implantation (N I/I) into the titanium nitride film. By using this technology only for nMOSFETs, dual-metal gate CMOS devices are fabricated with a CMOS-process compatibility. A low V_th is achieved for both n- and pMOSFETs by combining N I/I and a low-doped channel structure

Keywords

MOSFET; ion implantation; semiconductor device metallisation; titanium compounds; work function; MOSFET; TiN; TiNx gate electrode; dual-metal gate CMOS technology; low-doped channel structure; nitrogen concentration control; nitrogen ion implantation; threshold voltage; titanium nitride film; work function; CMOS logic circuits; CMOS technology; Electrodes; Laboratories; MOSFETs; Nitrogen; Silicon; Sputtering; Tin; Titanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954478

Filename

954478