New SiGe bipolar transistors and p-i-n diodes for power switching

Author

Hirose, F. ; Souda, Y. ; Nakano, K. ; Goya, S. ; Nishimori, T. ; Okumura, S.

Author_Institution

Adv. Technol. Res. Center, Mitsubishi Kasei Corp., Yokohama, Japan

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2417

Lastpage

2420

Abstract

We have first fabricated bipolar transistors and p-i-n diodes for power switching by using SiGe. Misfit dislocations with Ge addition in the film allow the reduction of minority carrier lifetime. If the Ge concentration in the SiGe layer is chosen in the range below 10% to avoid excessive misfit dislocations, the breakdown characteristics of the pn-junction at the SiGe/Si heterojunction are not deteriorated. When SiGe is used at the base layer in npn^-n⁺ bipolar transistors, a fast switching time of ~20 ns is possible in the 280 V-20 A class transistors, while the low on-voltage drop of 0.34 V is achieved at a collector current density of 113 A/cm². Moreover, if SiGe is applied to the p-anode in the thin -p/n^-n⁺ -diodes, the recovery time can be lowered more than 50% compared with Si diodes with the same structure

Keywords

Ge-Si alloys; carrier lifetime; current density; dislocation density; p-i-n diodes; power bipolar transistors; power semiconductor diodes; power semiconductor switches; semiconductor device breakdown; semiconductor materials; 20 A; 20 ns; 280 V; Ge concentration; SiGe bipolar transistors; SiGe p-i-n diodes; SiGe-Si; SiGe/Si heterojunction; breakdown characteristics; collector current density; minority carrier lifetime reduction; misfit dislocation; npn^-n⁺ bipolar transistors; on-voltage drop; pn-junction; power switching; recovery time; switching time; Bipolar transistors; Electric breakdown; Fabrication; Germanium silicon alloys; Heterojunctions; P-i-n diodes; PIN photodiodes; Silicon germanium; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954486

Filename

954486