Title :
New SiGe bipolar transistors and p-i-n diodes for power switching
Author :
Hirose, F. ; Souda, Y. ; Nakano, K. ; Goya, S. ; Nishimori, T. ; Okumura, S.
Author_Institution :
Adv. Technol. Res. Center, Mitsubishi Kasei Corp., Yokohama, Japan
fDate :
10/1/2001 12:00:00 AM
Abstract :
We have first fabricated bipolar transistors and p-i-n diodes for power switching by using SiGe. Misfit dislocations with Ge addition in the film allow the reduction of minority carrier lifetime. If the Ge concentration in the SiGe layer is chosen in the range below 10% to avoid excessive misfit dislocations, the breakdown characteristics of the pn-junction at the SiGe/Si heterojunction are not deteriorated. When SiGe is used at the base layer in npn-n+ bipolar transistors, a fast switching time of ~20 ns is possible in the 280 V-20 A class transistors, while the low on-voltage drop of 0.34 V is achieved at a collector current density of 113 A/cm2. Moreover, if SiGe is applied to the p-anode in the thin -p/n-n+ -diodes, the recovery time can be lowered more than 50% compared with Si diodes with the same structure
Keywords :
Ge-Si alloys; carrier lifetime; current density; dislocation density; p-i-n diodes; power bipolar transistors; power semiconductor diodes; power semiconductor switches; semiconductor device breakdown; semiconductor materials; 20 A; 20 ns; 280 V; Ge concentration; SiGe bipolar transistors; SiGe p-i-n diodes; SiGe-Si; SiGe/Si heterojunction; breakdown characteristics; collector current density; minority carrier lifetime reduction; misfit dislocation; npn-n+ bipolar transistors; on-voltage drop; pn-junction; power switching; recovery time; switching time; Bipolar transistors; Electric breakdown; Fabrication; Germanium silicon alloys; Heterojunctions; P-i-n diodes; PIN photodiodes; Silicon germanium; Switching circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
