Title :
Physics and applications of the Schottky junction transistor
Author :
Thornton, Trevor J.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
10/1/2001 12:00:00 AM
Abstract :
This paper presents the results from numerical simulations of a novel subthreshold transistor configuration. The device uses the input current from a forward-biased Schottky gate to control the larger current flowing in a depleted channel. Analytical approximations are used to derive the current gain of the transistor. The numerical simulations confirm the analytical derivation and show that a 0.5 μm gate length device would have a cutoff frequency approaching 10 GHz for supply voltages less than 0.5 V. Possible applications of the device in the areas of micropower analog circuits and ULSI logic are discussed
Keywords :
Schottky gate field effect transistors; field effect analogue integrated circuits; field effect logic circuits; low-power electronics; numerical analysis; semiconductor device models; 0.5 V; 0.5 mum; 10 GHz; Schottky junction transistor; ULSI logic; current control; current gain; cutoff frequency; depleted channel; forward-biased Schottky gate; micropower analog circuits; numerical simulation; subthreshold transistor configuration; supply voltage; Analog circuits; Boundary conditions; Cutoff frequency; Doping; FETs; MESFETs; Numerical simulation; Physics; Schottky barriers; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
