Physics and applications of the Schottky junction transistor

Author

Thornton, Trevor J.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2421

Lastpage

2427

Abstract

This paper presents the results from numerical simulations of a novel subthreshold transistor configuration. The device uses the input current from a forward-biased Schottky gate to control the larger current flowing in a depleted channel. Analytical approximations are used to derive the current gain of the transistor. The numerical simulations confirm the analytical derivation and show that a 0.5 μm gate length device would have a cutoff frequency approaching 10 GHz for supply voltages less than 0.5 V. Possible applications of the device in the areas of micropower analog circuits and ULSI logic are discussed

Keywords

Schottky gate field effect transistors; field effect analogue integrated circuits; field effect logic circuits; low-power electronics; numerical analysis; semiconductor device models; 0.5 V; 0.5 mum; 10 GHz; Schottky junction transistor; ULSI logic; current control; current gain; cutoff frequency; depleted channel; forward-biased Schottky gate; micropower analog circuits; numerical simulation; subthreshold transistor configuration; supply voltage; Analog circuits; Boundary conditions; Cutoff frequency; Doping; FETs; MESFETs; Numerical simulation; Physics; Schottky barriers; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954487

Filename

954487