Title :
Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure
Author :
Magari, Katsuaki ; Okamoto, Minoru ; Yasaka, Hiroshi ; Sato, Kenji ; Noguchi, Yoshio ; Mikami, Osamu
Author_Institution :
NTT Electron. Lab., Kanagawa, Japan
Abstract :
Signal gain agreement between TE and TM modes is realized under a specific operation condition in a traveling wave type amplifier using a strained multiple quantum well structure for the first time. The signal gain of the TM mode completely agrees with that of the TE mode at an amplifier driving current of 70 mA. The identical signal gain is 7.5 dB at present. However, the signal gain could be easily improved by using a device with a longer active region. In order to achieve polarization insensitive TWAs, the design parameter is the only confinement factor for the conventional bulk type.<>
Keywords :
laser modes; light polarisation; semiconductor junction lasers; semiconductor quantum wells; 7.5 dB; 70 mA; TE modes; TM modes; amplifier driving current; confinement factor; conventional bulk type; identical signal gain; longer active region; polarization insensitive TWA; semiconductor lasers; signal gain; strained multiple quantum well structure; traveling wave type amplifier; Capacitive sensors; Indium phosphide; Operational amplifiers; Optical amplifiers; Polarization; Quantum well devices; Semiconductor optical amplifiers; Tensile strain; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
