Title :
Physical modeling of the reverse-short-channel effect for circuit simulation
Author :
Miura-Mattausch, M. ; Suetake, M. ; Mattausch, H.J. ; Kumashiro, S. ; Shigyo, N. ; Odanaka, S. ; Nakayama, N.
Author_Institution :
Dept. of Electr. Eng., Hiroshima Univ., Japan
fDate :
10/1/2001 12:00:00 AM
Abstract :
The proposed threshold-voltage (Vth) model for circuit simulation includes reverse-short-channel effects (RSCE) and short-channel effects (SCE) based on their respective physical origins. A linear vertical-impurity profile approximation for simplified RSCE-modeling already enables 8 mV average Vth-accuracy (max<45 mV) under all bias conditions for source, drain, and bulk for Lgate down to 0.15 μm. The complete Vth-model needs only ten constant Lgate-independent parameters
Keywords :
MOSFET; circuit simulation; doping profiles; semiconductor device models; 0.15 mum; MOSFET; RSCE-modeling; bias conditions; channel impurity profile; circuit simulation; linear vertical-impurity profile approximation; physical modeling; reverse-short-channel effect; short-channel effect; threshold-voltage model; Circuit simulation; Doping profiles; Electron mobility; Germanium silicon alloys; MOSFETs; Notice of Violation; Semiconductor process modeling; Silicon germanium; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
