Title :
Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO/sub 3/
Author :
Verdiell, J.M. ; Rajbenbach, H. ; Huignard, J.P.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO/sub 3/ is reported. Energy transfer efficiencies up to 80% were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-limited beam was obtained on the combined beam. Crystal response time of the order of a few seconds was measured.<>
Keywords :
barium compounds; laser beams; light diffraction; photorefractive effect; semiconductor junction lasers; 100 mW; 80 percent; 820 nm; BaTiO/sub 3/; diffraction-limited beam combining; energy transfer efficiencies; index-guided diode; injection-locked laser arrays; photorefractive; response time; semiconductor laser diode arrays; two-wave mixing; Delay; Diffraction; Diode lasers; Energy exchange; Laser beams; Optical arrays; Semiconductor diodes; Semiconductor laser arrays; Semiconductor lasers; Time measurement;
Journal_Title :
Photonics Technology Letters, IEEE
