High-speed metal-semiconductor-metal photodetectors on InP:Fe

Author

Kuhl, D. ; Hieronymi, F. ; Böttcher, E.H. ; Bimberg, D.

Author_Institution

Inst. fuer Festkorperphys., Tech. Univ. Berlin, West Germany

Volume

2

Issue

8

fYear

1990

Firstpage

574

Lastpage

576

Abstract

Metal-semiconductor-metal (MSM) photodetectors on semi-insulating InP:Fe with a lateral planar structure have been fabricated. Laterally structured photodiodes are formed with interdigitated contact fingers. The detectors exhibit low dark currents of about 10 nA, an impulse response of 26 ps FWHM (full-width of half-maximum), and an internal quantum efficiency of 80%, all at 10 V bias. An electrical cutoff frequency of 40 GHz for the packaged detectors is obtained from s-parameter measurements, demonstrating that the response time is not limited by the parasitic elements of the devices.<>

Keywords

high-speed optical techniques; integrated optics; metal-semiconductor-metal structures; photodetectors; 10 V; 10 nA; 26 ps; 40 GHz; 80 percent; InP:Fe; electrical cutoff frequency; impulse response; interdigitated contact fingers; internal quantum efficiency; lateral planar structure; low dark currents; metal-semiconductor-metal photodetectors; packaged detectors; parasitic elements; photodiodes; response time; s-parameter measurements; Contacts; Cutoff frequency; Dark current; Detectors; Electric variables measurement; Fingers; Frequency measurement; Packaging; Photodetectors; Photodiodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.58053

Filename

58053