Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT´s

Author

del Alamo, J.A. ; Somerville, M.H.

Author_Institution

MIT, Cambridge, MA, USA

Volume

34

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1204

Lastpage

1211

Abstract

In spite of their outstanding transport characteristics, InP high-electron mobility transistors (HEMTs) deliver lower output power than GaAs pseudomorphic HEMTs (PHEMTs) throughout most of the millimeter-wave regime. However, the superior power-added efficiency of InP HEMTs when compared with GaAs PHEMTs makes this technology attractive for many applications. The reason for the relatively inferior power output of InP HEMTs lies in their comparatively small off-state and on-state breakdown voltages. This paper reviews the state of knowledge regarding the physics of breakdown voltage in InP HEMTs, placing it in contrast with GaAs PHEMTs. It also presents current understanding regarding burnout, a closely related phenomenon. This paper concludes by discussing strategies for improving the breakdown voltage and the power output of InP HEMTs

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device breakdown; GaAs; GaAs PHEMT; InP; InP HEMT; InP high-electron mobility transistors; breakdown voltage; burnout; efficiency; millimeter-wave power InP; transport characteristics; Electric breakdown; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Millimeter wave technology; Millimeter wave transistors; PHEMTs; Physics; Power generation;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.782077

Filename

782077