Title :
W-band InP HEMT MMICs using finite-ground coplanar waveguide (FGCPW) design
Author :
Yu, M. ; Matloubian, M. ; Petre, P. ; Hamilton, L.R. ; Bowen, R. ; Lui, M. ; Sun, H.C. ; Ngo, C.M. ; Janke, P. ; Baker, D.W. ; Robertson, R.S.
Author_Institution :
HRL Labs., Malibu, CA, USA
fDate :
9/1/1999 12:00:00 AM
Abstract :
In this paper, we report on the development of W-band monolithic microwave integrated circuit (MMIC) power amplifiers using 0.1-μm AlInAs/GaInAs/InP high electron mobility transistor (HEMT) technology and finite-ground coplanar waveguide (FGCPW) designs. In the device modeling, the Angelov nonlinear HEMT model was employed to predict the large signal performance of the device, and the results were validated by using state-of-the-art vector load-pull measurements. A two-stage single-ended W-band FGCPW MMIC using a 150-μm-wide HEMT as the driver and a 250-μm-wide HEMT for the output stage was designed, fabricated, and tested. The MMIC amplifier demonstrates a maximum output power of 18.6 dBm with 18.2% power-added efficiency and 10.6 dB associated gain at 94 GHz. This result is the best output power to date reported from an InP-based MMIC using FGCPW design at this frequency
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; coplanar waveguide components; field effect MMIC; gallium arsenide; indium compounds; 0.1 mum; 10.6 dB; 150 mum; 18.2 percent; 250 mum; 94 GHz; AlInAs/GaInAs/InP HEMT; Angelov nonlinear HEMT model; HEMT technology; InP; MMIC amplifier; W-band InP HEMT MMIC; device modeling; finite-ground coplanar waveguide; large signal performance; load-pull measurements; monolithic microwave integrated circuit; power amplifiers; power-added efficiency; two-stage single-ended W-band FGCPW MMIC; Coplanar waveguides; HEMTs; Indium phosphide; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation; Predictive models;
Journal_Title :
Solid-State Circuits, IEEE Journal of
