• DocumentCode
    1537719
  • Title

    W-band monolithic oscillator using InAlAs/InGaAs HEMT

  • Author

    Kwon, Y. ; Pavlidis, D. ; Tutt, M. ; Ng, G.I. ; Lai, Richard ; Brock, T.

  • Author_Institution
    Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    26
  • Issue
    18
  • fYear
    1990
  • Firstpage
    1425
  • Lastpage
    1426
  • Abstract
    A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.
  • Keywords
    III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave oscillators; 81 GHz; HEMT; InAlAs-InGaAs; W-band monolithic oscillator; submicron technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900914
  • Filename
    58068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1537719