Title :
W-band monolithic oscillator using InAlAs/InGaAs HEMT
Author :
Kwon, Y. ; Pavlidis, D. ; Tutt, M. ; Ng, G.I. ; Lai, Richard ; Brock, T.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave oscillators; 81 GHz; HEMT; InAlAs-InGaAs; W-band monolithic oscillator; submicron technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900914
