Title :
40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs
Author :
Miyamoto, Yutaka ; Yoneyama, Mikio ; Otsuji, Taiichi ; Yonenaga, Kazushige ; Shimizu, Naofumi
Author_Institution :
NTT Network Syst. Dev. Center, Kanagawa, Japan
fDate :
9/1/1999 12:00:00 AM
Abstract :
This paper presents 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-μm-gate-length InP high electron mobility transistor IC´s and a scheme for upgrading toward a terabit-per-second capacity system. A 40-Gbit/s, 300-km, in-line transmission experiment and a dispersion-tolerant 40-Gbit/s duobinary transmission experiment are described as 40-Gbit/s single carrier system applications on dispersion-shifted fiber. An ultra-high-speed receiver configuration using a high-output-power photodiode is introduced to realize fully electrical receiver operation beyond 40 Gbit/s. The high-sensitivity operation of the optical receiver (-27.6 dBm@BER=10-9) is demonstrated at a data bit rate of 50 Gbit/s for the first time using a unitraveling carrier photodiode. A dense wavelength division multiplexing (DWDM) system operating up to terabits per second can be easily realized on a zero-dispersion flattened transmission line using ultra-high speed TDM channels of 40 Gbit/s and beyond. An experiment demonstrates 1.04-Tbit/s DWDM transmission based on 40-Gbit/s TDM channels with high optical spectrum density (0.4 bit/s/Hz) without dispersion compensation
Keywords :
HEMT integrated circuits; III-V semiconductors; digital communication; error statistics; field effect analogue integrated circuits; field effect digital integrated circuits; indium compounds; optical communication equipment; optical receivers; time division multiplexing; very high speed integrated circuits; wavelength division multiplexing; 0.1 micron; 1.04 Tbit/s; 300 km; 40 Gbit/s; 50 Gbit/s; BER; InP; InP HEMT ICs; TDM transmission technologies; bit error rate; dense WDM system; dispersion-shifted fiber; dispersion-tolerant duobinary transmission experiment; high electron mobility transistor ICs; high-output-power photodiode; inline transmission experiment; time division multiplexing; ultra-high speed TDM channels; ultra-high-speed ICs; ultra-high-speed receiver configuration; unitraveling carrier photodiode; wavelength division multiplexing; HEMTs; High speed optical techniques; Indium phosphide; MODFETs; Optical fiber dispersion; Optical network units; Optical receivers; Photodiodes; Time division multiplexing; Wavelength division multiplexing;
Journal_Title :
Solid-State Circuits, IEEE Journal of