Title :
Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGe HBT
Author :
Ohhata, Kenichi ; Masuda, Toru ; Ohue, Eiji ; Washio, Katsuyoshi
Author_Institution :
Hitachi Device Eng. Co. Ltd., Tokyo, Japan
fDate :
9/1/1999 12:00:00 AM
Abstract :
A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of 19 dB. The amplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s
Keywords :
Ge-Si alloys; automatic gain control; bipolar analogue integrated circuits; heterojunction bipolar transistors; integrated circuit design; optical communication equipment; semiconductor materials; wideband amplifiers; 18 dB; 25 Gbit/s; 32.7 GHz; AGC amplifier IC; SiGe; SiGe HBT; automatic gain control; broadband amplifier; capacitor peaking; damping factor optimization; heterojunction bipolar transistor; self-aligned selective-epitaxial HBT; transimpedance load circuit; wide dynamic range; wide-bandwidth amplifier; Bandwidth; Bipolar integrated circuits; Broadband amplifiers; Capacitors; Damping; Dynamic range; Gain control; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
