DocumentCode
1537776
Title
Investigation of TE and TM polarised laser emission in GaInP/AlGaInP lasers by growth-controlled strain
Author
Boermans, M.J.B. ; Valster, A. ; Van der Heyden, J.M.M.
Author_Institution
Philips Res. Labs., Eindhoven, Netherlands
Volume
26
Issue
18
fYear
1990
Firstpage
1438
Lastpage
1439
Abstract
GaInP/AlGaInP double heterostructure lasers can be obtained with either TE or TM polarised emission. In addition it it shown that, by using appropriate samples, TE or TM lasing can be selected by changing the temperature or the cavity length.
Keywords
aluminium compounds; gallium arsenide; indium compounds; light polarisation; p-n heterojunctions; semiconductor junction lasers; GaInP-AlGaInP; TE polarised emission; TM polarised emission; cavity length; double heterostructure lasers; growth-controlled strain; polarised laser emission; semiconductor laser; temperature;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900922
Filename
58076
Link To Document