Bipolar transistor epilayer design using the MAIDS mixed-level simulator

Author

De Vreede, Leo C N ; De Graaff, Henk C. ; Willemen, Joost A. ; Van Noort, Wibo ; Jos, Rik ; Larson, Lawrence E. ; Slotboom, Jan W. ; Tauritz, Joseph L.

Author_Institution

Dept. of Inf. Technol. & Syst., Delft Univ. of Technol., Netherlands

Volume

34

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1331

Lastpage

1338

Abstract

In this paper, we address the epilayer design of the bipolar transistor using the one-dimensional (1-D) mixed-level simulator MAIDS (microwave active integral device simulator). MAIDS facilitates simulation of the electrical behavior of bipolar (hetero) junction transistors with various doping profiles and under different signal conditions in a realistic circuit environment. MAIDS as implemented within Hewlett Packard´s microwave design system is a useful and promising tool in the development of bipolar transistors for large-signal conditions. Using MAIDS, we have identified the dominant bipolar transistor distortion sources with respect to the biasing conditions. Simulation results are compared with small- and large-signal measurements for the BFQ135 transistor, which has been developed for cable television (CATV) applications. By analyzing the measured and simulated data, we have developed an optimum epilayer design map for third-order intermodulation distortion that has proven to be particularly useful in the epilayer dimensioning of transistors for CATV applications

Keywords

bipolar transistors; digital simulation; doping profiles; electronic engineering computing; equivalent circuits; heterojunction bipolar transistors; intermodulation distortion; nonlinear distortion; semiconductor device models; semiconductor epitaxial layers; BFQ135 transistor; BJT; CATV applications; HBT; Hewlett Packard microwave design system; MAIDS mixed-level simulator; biasing conditions; bipolar heterojunction transistors; bipolar junction transistors; bipolar transistor distortion sources; bipolar transistor epilayer design; circuit environment; doping profiles; electrical behavior; intermodulation distortion; large-signal conditions; microwave active integral device simulator; optimum epilayer design map; third-order IMD; Analytical models; Bipolar transistor circuits; Bipolar transistors; Cable TV; Circuit simulation; Distortion measurement; Doping profiles; Microwave devices; Microwave transistors; Particle measurements;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.782094

Filename

782094