• DocumentCode
    1537828
  • Title

    Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

  • Author

    Tanaka, Shoji ; Hayama, Hirofumi ; Furukawa, A. ; Baba, Toshihiko ; Mizuta, M. ; Honjo, Kazuhiko

  • Author_Institution
    NEC Corp., Kawasaki, Japan
  • Volume
    26
  • Issue
    18
  • fYear
    1990
  • Firstpage
    1439
  • Lastpage
    1441
  • Abstract
    The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; electric noise measurement; electron device noise; gallium arsenide; indium compounds; p-n heterojunctions; random noise; 1/f noise; III-V semiconductors; InAlAs-InGaAs; low-frequency noise performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900923
  • Filename
    58077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1537828