Title :
Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors
Author :
Tanaka, Shoji ; Hayama, Hirofumi ; Furukawa, A. ; Baba, Toshihiko ; Mizuta, M. ; Honjo, Kazuhiko
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; electric noise measurement; electron device noise; gallium arsenide; indium compounds; p-n heterojunctions; random noise; 1/f noise; III-V semiconductors; InAlAs-InGaAs; low-frequency noise performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900923
