Title :
13.3 W quasi-continuous operation of 0.99 μm wavelength SCH-QW InGaAs/GaAs/InGaP broadened waveguide lasers
Author :
Garbuzov, D.Z. ; Gokhale, M.R. ; Dries, J.C. ; Studenkov, P. ; Martinelli, R.U. ; Connolly, J.C. ; Forrest, S.R.
Author_Institution :
Sarnoff Res. Centre, Princeton Univ., NJ, USA
fDate :
8/14/1997 12:00:00 AM
Abstract :
An output power of 13.3 W at 0.99 μm wavelength was obtained in the quasi-continuous wave regime from a 3 mm long, 100 μm aperture InGaAs/GaAs/InGaP SCH QW laser with broadened waveguide. A differential efficiency of 0.72 was demonstrated at 15°C for these devices with a series resistance of 0.025 Ω
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; quantum well lasers; waveguide lasers; 0.025 ohm; 0.99 micron; 100 micron; 13.3 W; 15 C; 3 mm; InGaAs-GaAs-InGaP; SCH QW laser; broadened waveguide lasers; quasi-continuous operation; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970991
